High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (Mosfets)

by Maity, Niladri Pratap
ISBN: 9781771888431
Availability:
  • Online Only
$159.95

Available Offers


Pickup at {0} Out of stock at {0} Check other stores
FREE -
Ship to Me
$3.99 -

Overview

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore's law).

This book presents a broad review of SiO2 materials, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

  • Format: Hardcover
  • Author: Maity, Niladri Pratap
  • ISBN: 9781771888431
  • Condition: New
  • Number Of Pages: 246
  • Publication Year: 2020
Language: English